Toshiba’s Recently Launched 1200V and 1700V Silicon Carbide MOSFET Modules will Contribute to Littler, More Productive Industrial Hardware

Toshiba’s Recently Launched 1200V and 1700V Silicon Carbide MOSFET Modules

KAWASAKI, Japan—Toshiba Electronic Gadgets & Capacity Enterprise (“Toshiba”) has propelled two silicon carbide (SiC) MOSFET Double Modules: “MG600Q2YMS3,” with a voltage rating of 1200V and deplete current rating of 600A; and “MG400V2YMS3,” with a voltage rating of 1700V and deplete current rating of 400A. The primary Toshiba items with these voltage ratings, connect the already discharged MG800FXF2YMS3 in a lineup of 1200V, 1700V, and 3300V devices.
The modern modules have mounting compatibility with broadly utilized silicon (Si) IGBT modules. Their moo vitality misfortune characteristics meet needs for higher effectiveness and measurable decreases in mechanical gear, such as converters and inverters for railroad vehicles, and renewable vitality control era frameworks.

Applications

  • Inverters and converters for railway vehicles
  • Renewable energy power generation systems
  • Motor control equipment
  • High-frequency DC-DC converter

Features

Mounting compatible with Si IGBT modules
Lower loss than Si IGBT modules
MG600Q2YMS3
VDS(on)sense =0.9V (typ.) @ID=600A, Tch=25°C
Eon=25mJ (typ.), Eoff=28mJ (typ.) @VDS=600V, ID=600A, Tch=150°C
MG400V2YMS3
VDS(on)sense=0.8V (typ.) @ID=400A, Tch=25°C
Eon=28mJ (typ.), Eoff=27mJ (typ.) @VDS=900V, ID=400A, Tch=150°C
Built-in NTC Thermistor

Fundamental Specifications

Part number MG600Q2YMS3 MG400V2YMS3
Package 2-153A1A
Absolute

maximum

ratings

Drain-source voltage  VDSS  (V) 1200 1700
Gate-source voltage  VGSS  (V) +25/-10 +25/-10
Drain current (DC)  ID  (A) 600 400
Drain current (pulsed)  IDP  (A) 1200 800
Channel temperature  Tch  (°C) 150 150
Isolation voltage Visol (Vrms) 4000 4000
Electrical

characteristics

Drain-source on-voltage (sense)

VDS(on)sense  typ.  (V)

@VGS =+20V,

Tch=25°C

0.9

@ID=600A

0.8

@ID=400A

Source-drain on-voltage (sense)

VSD(on)sense  typ.  (V)

@VGS =+20V,

Tch=25°C

0.8

@IS=600A

0.8

@IS=400A

Source-drain off-voltage (sense)

VSD(off)sense  typ.  (V)

@VGS =-6V,

Tch=25°C

1.6

@IS=600A

1.6

@IS=400A

Turn-on switching loss Eon typ. (mJ)

Eon  typ.  (mJ)

@Tch=150°C 25

@ VDS=600V,

ID=600A

28

@VDS=900V,

ID=400A

Turn-off switching loss Eoff typ. (mJ)

Eoff  typ.  (mJ)

@Tch=150°C 28

@ VDS=600V,

ID=600A

27

@VDS=900V,

ID=400A

Thermistor characteristics Rated NTC resistance  R  typ.  (kΩ) 5.0 5.0
NTC B value  B  typ.  (K) @TNTC=25 – 150°C 3375 3375

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